On Prognosis of Influence of Radiation Processing on Transport of Charge Carriers
Abstract
In this paper, we introduce a model for analysis of the influence of radiation processing on transport of charge carriers in p-n-junctions, which were manufactured in multilayer structures. The model allows for taking into account a larger quantity of factors in comparison with existing models in the literature. We also introduce an analytical approach to analyze the transport of charge carriers. This approach allows us to simultaneously account for changes in material properties in space and time, as well as the nonlinearity of the transport.
Keywords:
Charge carrier transport, P-n-junction, Radiation processing, Model of processes, Analytical approach for modellingReferences
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