On Prognosis of Influence of Radiation Processing on Transport of Charge Carriers

Authors

https://doi.org/10.48314/jmmt.vi.47

Abstract

In this paper, we introduce a model for analysis of the influence of radiation processing on transport of charge carriers in p-n-junctions, which were manufactured in multilayer structures. The model allows for taking into account a larger quantity of factors in comparison with existing models in the literature. We also introduce an analytical approach to analyze the transport of charge carriers. This approach allows us to simultaneously account for changes in material properties in space and time, as well as the nonlinearity of the transport.

Keywords:

Charge carrier transport, P-n-junction, Radiation processing, Model of processes, Analytical approach for modelling

References

  1. [1] Lachin, V. I., & Savelov, N. S. (2001). Electronics: A textbook for technical universities. Feniks. (In Russian). https://library.bmstu.ru/Catalog/Details/47903

  2. [2] Avaev, N. A., Naumov, Y. E., & Frolkin, V. T. (1991). Osnovy mikroelektroniki. Radio i Svyaz. (In Russian). https://djvu.online/file/vTdlZk9FDnFxt

  3. [3] Gotra, Z. Y. (1991). Technology of microelectronic devices. Radio and Communication, Moscow. (In Russian). https://ru.djvu.online/file/W65PGmQs7mGBH

  4. [4] Shalimova, K. V. (1985). Physics of semiconductors. Energoatomizdat, Moscow. https://www.scirp.org/reference/referencespapers?referenceid=1015776

  5. [5] Aleksenko, A. G., & Shagurin, I. I. (1990). Microcircuitry. Radio i Svyaz. https://www.studmed.ru/aleksenko-ag-shagurin-ii-mikroshemotehnika_747e8ee5482.html

  6. [6] Pankratov, E. L., & Bulaeva, E. A. (2014). An approach to manufacture a heterobipolar transistors in thin film structures. On the method of optimization. International Journal of Micro-Nano Scale Transport, 4(1), 17–31. https://doi.org/10.1260/1759-3093.4.1-2.17

  7. [7] Pankratov, E. L., & Bulaeva, E. A. (2015). Optimization of manufacturing of emitter-coupled logic to decrease surface of chip. International Journal of Modern Physics B, 29(05), 1550023. https://doi.org/10.1142/S021797921550023X

  8. [8] Pankratov, E. L. (2017). On approach to optimize manufacturing of bipolar heterotransistors framework circuit of an operational amplifier to increase their integration rate. Influence mismatch-induced stress. Journal of Computational and Theoretical Nanoscience, 14(10), 4885–4899. https://doi.org/10.1166/jctn.2017.6898

  9. [9] Pankratov, E. L. (2021). An approach to model manufacturing of an enhanced swing differential Colpitts oscillator based on heterostructures to increase density of their elements with account mismatch-induced stress: On optimization of annealing. The International Journal of Advanced Manufacturing Technology, 112(3), 949–967. https://doi.org/10.1007/s00170-020-06082-3%0A%0A

  10. [10] Soboleva, O. S., Slipchenko, S. O., & Pikhtin, N. A. (2021). Isotype n-AlGaAs/n-gaas heterostructures optimized for efficient interband radiative recombination under current pumping. Semiconductors, 55(1), S8--S13. https://doi.org/10.1134/S1063782621050158%0A%0A

  11. [11] Sokolov, Y. D. (1955). About the definition of dynamic forces in the mine lifting. Applied Mechanics, 1(1), 23–35.

  12. [12] Korn, G. A., & Korn, T. M. (2000). Mathematical handbook for scientists and engineers: Definitions, theorems, and formulas for reference and review. Courier Corporation. https://ia800701.us.archive.org/26/items/in.ernet.dli.2015.133423/2015.133423

  13. [13] Zorin, E. I., Pavlov, P. V., & Tetelbaum, D. I. (1975). Ion doping of semiconductors. Energiya. https://lib.tusur.ru/irbis-new/i64r_15/cgiirbis_64.exe

  14. [14] Fahey, P. M. (1985). Point defects and dopant diffusion in silicon. Stanford University. https://ui.adsabs.harvard.edu/abs/1985PhDT.........8F/abstract

  15. [15] Vinetskii, V. L., & Kholodar, G. A. (1979). Radiation physics of semiconductors. Naukova Dumka. (In Russian). https://vufind.lib.tpu.ru/vufind/Record/111481?sid=18084959

  16. [16] Pankratov, E. L. (2008). Analysis of redistribution of radiation defects taking into account diffusion and several secondary processes. Modern Physics Letters B, 22(28), 2779–2791. https://doi.org/10.1142/S0217984908017230

Published

2026-11-01

How to Cite

Pankratov, E. L. (2026). On Prognosis of Influence of Radiation Processing on Transport of Charge Carriers. Journal of Materials and Manufacturing Technology, 3(1), 1-15. https://doi.org/10.48314/jmmt.vi.47